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Showing 1 results for Keywords: Semiconductors

M. J. Tafreshi, B. Dibaie, M. Fazli,
Volume 9, Issue 1 (3-2012)
Abstract

Abstract: A thermodynamic model was used to find out the optimum temperature for the growth of ZnS single crystals in closed ampoules by chemical vapor transport technique. Based on this model 1002 °C was found to be optimum temperature for 2 mg/cm3 concentration of transporting agent (iodine). ZnS Crystals were grown in optimum (1002 °C) and non-optimum (902 °C and 1102 °C) temperatures. The composition structure and microstructure of the grown crystals were studied by Atomic absorption spectroscopy, X-ray diffraction and Scanning electron microscopy measurements. Properties of the grown crystals were correlated to the growth conditions especially a stability in mass transport along the closed tube length.

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